Semiconductor devices having contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus

ABSTRACT

Forming a semiconductor device can include forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region. A polysilicon contact plug can be formed in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P). Related structures are also discussed.

RELATED APPLICATIONS

The present application is a divisional of and claims priority from U.S.application Ser. No. 10/440,777, filed May 19, 2003, now U.S. Pat. No.6,858,529 which claims priority from Korean Application No. 2002-0036487filed Jun. 27, 2002. The disclosures of both of the above referencedapplications are hereby incorporated herein in their entirety byreference.

FIELD OF THE INVENTION

The present invention relates to methods of forming semiconductordevices and, more particularly, to methods of forming contact plugs forsemiconductor devices and related structures.

BACKGROUND OF THE INVENTION

Generally, a contact hole of a semiconductor device exposes a conductivelayer through an overlying interlayer insulating layer. A contact plugfilling the contact hole is electrically connected to the conductivelayer. The contact plug may be made of doped polysilicon or metal. Aconventional method of forming a semiconductor device having a contacthole is discussed with reference to FIG. 1.

Referring to FIG. 1, a device isolation layer 2 is formed on a P-typesemiconductor substrate 1 to define an active region. A gate pattern 5is formed to cross the active region. The gate pattern 5 includes a gateinsulating layer 3 and a gate electrode 4 that are sequentially stacked.N-type impurity diffusion layers 6 and 7 are formed in the active regionadjacent opposite sides of the gate pattern 5. The N-type impuritydiffusion layers 6 and 7 respectively provide a source region and adrain region. The gate pattern 5, the source region 6, and the drainregion 7 make up an NMOS transistor.

An interlayer insulating layer 8 is formed on an entire surface of thesemiconductor substrate 1 including the transistor. The interlayerinsulating layer 8 is patterned to provide contact holes 9 exposingpredetermined areas of the source/drain regions 6 and 7. Contact plugs10 are formed to fill the contact holes 9. Lower sides of the contactplugs 10 are electrically connected to the source/drain regions 6 and 7.The contact plugs 10 can be plugs of phosphorus-doped polycrystallinesilicon (P-doped polysilicon). If phosphorus (P) from the contact plugs10 diffuses to the source/drain regions 6 and 7, the source/drainregions 6 and 7 may increase in doping concentration and/or expandeddiffusion regions “F” may be formed at the source/drain regions 6 and 7.

As semiconductor devices are continuously scaled down, contactresistances between the contact plugs 10 and the source/drain regions 6and 7 may increase. Accordingly, doping concentrations of the contactplugs 10 may be increased to reduce contact resistances. Thesource/drain regions 6 and 7 may thus be subjected to greater increasesin diffusion and resulting increases in doping concentration, so thatthe expanded diffusion areas “F” may extend even further. As a result,an energy barrier of the drain region 7 may be reduced with increases ina voltage applied to the drain region 7. Stated in other words, adrain-induced barrier lowering (DIBL) effect may be increased. As theDIBL effect increases, a likelihood of punchthrough between the sourceand drain regions 6 and 7 may also increase.

SUMMARY OF THE INVENTION

According to embodiments of the present invention, methods of forming asemiconductor device can include forming an insulating layer on asemiconductor substrate including a conductive region thereof, whereinthe insulating layer has a contact hole therein exposing a portion ofthe conductive region. A polysilicon contact plug can be formed in thecontact hole wherein at least a portion of the polysilicon contact plugis doped with an element having a diffusion coefficient that is lessthan a diffusion coefficient of phosphorus (P).

The element having the diffusion coefficient that is less than adiffusion coefficient of phosphorus (P) can be selected from at leastone element from Group V of the periodic table such as arsenic and/orantimony. More particularly, the element having the diffusioncoefficient that is less than a diffusion coefficient of phosphorus (P)can be arsenic, the conductive region of the semiconductor substrate canbe a region of the substrate doped with an N-type dopant, and thesubstrate can be a P-type substrate.

Forming the polysilicon contact plug can include forming a polysiliconlayer in the contact hole and on a surface of the insulating layeropposite the semiconductor substrate, and removing portions of thepolysilicon layer from the surface of the insulating layer opposite thesemiconductor substrate while maintaining portions of the polysiliconlayer in the contact hole. More particularly, removing portions of thepolysilicon layer from the surface of the insulating layer can includeplanarizing the polysilicon layer down to the surface of the insulatinglayer.

Forming the polysilicon contact plug can include forming a first portionof the polysilicon contact plug that partially fills the contact holewhile leaving an unfilled portion of the contact hole, and forming asecond portion of the polysilicon contact plug in the unfilled portionof the contact hole. The first portion of the polysilicon contact plugcan be formed at a first deposition rate, and the second portion of thepolysilicon contact plug can be formed at a second deposition ratewherein the second deposition rate is greater than the first depositionrate.

Forming the polysilicon contact plug can include forming a first portionof the polysilicon contact plug partially filling the contact hole whileleaving an unfilled portion of the contact hole, and forming a secondportion of the polysilicon contact plug in the unfilled portion of thecontact hole. Here, the first portion of the polysilicon contact plugcan be doped with the element having the diffusion coefficient that isless than the diffusion coefficient of phosphorus (P), and the secondportion of the polysilicon contact plug can be doped with an elementdifferent than the element used to dope the first portion of thepolysilicon contact plug. More particularly, the first portion of thepolysilicon contact plug can be formed using a single wafer typedeposition apparatus, and the second portion of the polysilicon contactplug can be formed using a batch type deposition apparatus. In thealternative, the first portion of the polysilicon contact plug can beformed using a single wafer type deposition apparatus, and the secondportion of the polysilicon contact plug can be formed using a singlewafer type deposition apparatus. In addition, the second portion of thepolysilicon contact plug can be doped with phosphorus, and the firstportion of the polysilicon contact plug can be doped with arsenic.Moreover, the second portion of the polysilicon contact plug can bedoped in-situ or using POCl₃.

Forming the insulating layer can be preceded by forming an isolationlayer on the semiconductor substrate wherein the isolation layer definesan active region of the substrate not covered by the isolation layer,forming a gate extending across the active region of the substrate, andforming a doped portion of the active region adjacent to the gatethereby defining the conductive region of the substrate. The insulatinglayer comprises forming a silicon oxide layer which can be formed usingchemical vapor deposition. Forming the polysilicon contact plug caninclude forming at least a portion of the polysilicon contact plug in asingle wafer deposition apparatus.

According to additional embodiments of the present invention, asemiconductor device can include a semiconductor substrate having aconductive region on a surface thereof, and an insulating layer on thesemiconductor substrate, wherein the insulating layer has a contact holetherein exposing a portion of the conductive region. The device can alsoinclude a polysilicon contact plug in the contact hole wherein at leasta portion of the polysilicon contact plug is doped with an elementhaving a diffusion coefficient that is less than a diffusion coefficientof phosphorus (P). The element having the diffusion coefficient that isless than a diffusion coefficient of phosphorus (P) can be selected fromat least one element from Group V of the periodic table, such as arsenicand/or antimony. More particularly, the element can be arsenic. Theconductive region of the semiconductor substrate may include a region ofthe substrate doped with an N-type dopant, and the substrate may be aP-type substrate.

In addition, the polysilicon contact plug can include first and secondportions in the contact hole wherein the first portion is between thesecond portion and the substrate. The first portion of the polysiliconcontact plug is doped with the element having the diffusion coefficientthat is less than the diffusion coefficient of phosphorus (P). Thesecond portion of the polysilicon contact plug is doped with an elementdifferent than the element used to dope the first portion of thepolysilicon contact plug. The second portion of the polysilicon contactplug can be doped with phosphorus, and the first portion of thepolysilicon contact plug can be doped with arsenic.

The device can also include an isolation layer, a gate, and a dopedportion of the active region. The isolation layer is between thesemiconductor substrate and the insulating layer, and the isolationlayer defines an active region of the substrate not covered by theisolation layer. The gate extends across the active region of thesubstrate between the semiconductor substrate and the insulating layer,and the doped portion of the active region is adjacent to the gate anddefines the conductive region of the substrate. Moreover, the insulatinglayer can include a silicon oxide layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view illustrating a conventional method offorming a semiconductor device having a contact hole.

FIG. 2 through FIG. 5 are cross-sectional views illustrating steps offorming a semiconductor device according to embodiments of the presentinvention.

FIG. 6A is a graph illustrating characteristics of a first transistor.Drain current is illustrated as a function of gate voltage.

FIG. 6B is a graph illustrating characteristics of a second transistorformed according to embodiments of the present invention. Drain currentis illustrated as a function of gate voltage.

FIG. 7 and FIG. 8 are cross-sectional views illustrating steps offorming a semiconductor device according to additional embodiments ofthe present invention.

DESCRIPTION OF EMBODIMENTS

The present invention now will be described more fully hereinafter withreference to the accompanying drawings, in which embodiments of theinvention are shown. This invention may, however, be embodied in manydifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the invention to those skilled in the art. Likenumbers refer to like elements throughout. It will be understood thatwhen an element such as a layer, region or substrate is referred to asbeing “on” another element, it can be directly on the other element orintervening elements may also be present. In contrast, when an elementis referred to as being “directly on” another element, there are nointervening elements present. It will also be understood that when anelement is referred to as being “connected” or “coupled” to anotherelement, it can be directly connected or coupled to the other element orintervening elements may be present. In contrast, when an element isreferred to as being “directly connected” or “directly coupled” toanother element, there are no intervening elements present.

FIG. 2 through FIG. 5 are cross-sectional views illustrating steps offorming a semiconductor device according to embodiments of the presentinvention. FIG. 6A is a graph illustrating characteristics of a firsttransistor, where drain current is illustrated as a function of gatevoltage. FIG. 6B is a graph illustrating the characteristics of a secondtransistor formed according to embodiments of the present invention,where drain current is illustrated as a function of gate voltage. InFIG. 6A and FIG. 6B, the horizontal axis shows a gate voltage and thevertical axis shows drain current.

Referring to FIG. 2, a device isolation layer 102 is formed on a P-typesemiconductor substrate 101 to define an active region. A gateinsulating layer 103, a gate electrode layer 104, and a hard mask layer105 are sequentially stacked on an entire surface of the semiconductorsubstrate 101 having the active region. The device isolation layer 102may be a trench isolation layer, and the gate insulating layer 103 maybe a thermal oxide layer that is used as a gate insulating layer. Thegate electrode layer 104 may include doped polysilicon and/or polycide.Here, polycide may include doped polysilicon and metal silicide layersthat are sequentially stacked. The hard mask layer 105 may be aninsulating layer (e.g., a silicon nitride layer) having an etchselectivity with-respect to the gate electrode layer 104 and withrespect to a silicon oxide layer subsequently used as a typicalinterlayer insulating film.

Referring to FIG. 3, the hard mask layer 105, the gate electrode layer104, and the gate insulating layer 103 are sequentially patterned toform a gate insulating layer pattern 103 a, a gate electrode 104 a, anda hard mask pattern 105 a that are sequentially stacked. The hard maskpattern 105 a, the gate electrode 104 a, and the gate insulating layerpattern 103 a provide a gate pattern(s) 106 crossing the active region.Using the gate pattern 106 and the device isolation layer 102 as anion-implanting mask, N-type impurities are implanted to form impuritydiffusion regions 108 in the active region. A spacer 107 is formed onboth sidewalls of the gate pattern 106. The spacer 107 may be aninsulating layer (e.g., a silicon nitride layer) having an etchselectivity with respect to a silicon oxide layer subsequently used as atypical interlayer insulating film.

Following formation of the spacer 107, a heavily doped impuritydiffusion layer (not shown) may be formed in exposed portions of theactive region. This can be performed by implanting N-type impurities ata higher dose than that of the N-type impurities using gate patterns106, spacers 107, and the device isolation layers 102 as anion-implanting mask.

The N-type impurity diffusion regions 108 may provide respectivesource/drain regions. The N-type impurity diffusion regions 108 and thegate pattern 106 may provide a transistor. An interlayer insulatinglayer 109 is formed on an entire surface of a semiconductor substrate101 including the N-type impurity diffusion regions 108. According tosome embodiments, the interlayer insulating layer 109 can be a chemicalvapor deposition (CVD) silicon oxide layer used as a typical interlayerinsulating layer.

Referring to FIG. 4, FIG. 5, FIG. 6A, and FIG. 6B, the interlayerinsulating layer 109 is patterned to form contact holes 110 exposingpredetermined areas of the N-type impurity diffusion layers 108. In thiscase, the contact holes 110 may be self-aligned contact holes by usingthe spacers 107. That is, a portion of a sidewall of each contact hole110 may be a respective spacer 107.

An arsenic doped polycrystalline silicon layer (hereinafter referred toas “As-doped polysilicon layer”) 120 is formed on an entire surface ofthe semiconductor substrate 101 to fill the contact holes 110. TheAs-doped polysilicon layer 120 is doped with arsenic (As), and arsenichas a diffusion coefficient that is less than that of phosphorus (P)among elements selected from 25 Group V of the periodic table byMendeleef. The As-doped polysilicon layer 120 is planarized down to atop surface of the interlayer insulating film 109 to form contact plugs120 a in the contact hole 110.

The diffusion coefficient of arsenic (As) is 0.32 cm²/sec, which is lessthan 10.5 cm²/sec that is the diffusion coefficient of phosphorus (P).The diffusion coefficient of phosphorus (P) is about 33 times higherthan that of As. Therefore, it is possible to reduce diffusion ofimpurities from the contact plugs 120 a to the N-type impurity diffusionlayers 108. Thus, a doping concentration of contact plugs 120 a can beincreased while not significantly increasing or reducing diffusion fromthe contact plugs to the N-type impurity diffusion layers 108. As aresult, a punchthrough characteristic of the resulting transistor may beimproved. Graphs illustrating improvement of punchthroughcharacteristics are illustrated in FIG. 6A and FIG. 6B.

In a first transistor, a width of-the gate pattern 106 can be 0.205micrometer and a length thereof can be 0.18 micrometer. The N-typeimpurity diffusion layer 108 of the first transistor is formed byimplanting phosphorus (P) ions at a dose of 1.4×10¹³ atoms/cm² with anenergy of 20 KeV. The contact plug of the first transistor is made ofpolysilicon-doped with phosphorus at a doping concentration of 1.0×10²⁰atoms/cm³.

A graph illustrating drain current as a function of gate voltage of thefirst transistor is illustrated in FIG. 6A. A curve 151 exhibits draincurrents measured with variation of the gate electrode after applying avoltage of 0.1V to a drain of the first transistor. A curve 152 exhibitsdrain currents measured with variation of the gate electrode afterapplying a voltage of 2.0V to the drain of the first transistor. A gatevoltage of the curve 151 corresponding to a predetermined drain currentIdc (e.g., 10⁻⁷ A/μm) is 1.18V. A gate voltage of the curve 152 is0.96V. A difference ΔVa between the gate voltages is 0.22V.

A second transistor according to embodiments of the present inventionincludes a contact plug 120 a of polysilicon doped with arsenic at adoping concentration of 3.0×10²⁰ atoms/cm³. A graph illustrating draincurrent characteristics as a function of gate voltage of the secondtransistor is illustrated in FIG. 6B. A curve 161 illustrates draincurrents measured with variation of the gate voltage after applying avoltage of 0.1V to the drain. A curve 162 illustrates drain currentsmeasured with variation of the gate voltage after applying a voltage of2.0V to the drain. When a predetermined drain current Idc is 10⁻⁷ A/μm,a gate voltage of the curve 161 is 0.98V and a gate voltage of the curve162 is 0.93V. A difference ΔVb between the gate voltages is 0.05V.

Comparing the voltage differences ΔVa and ΔVb with each other, thevoltage difference ΔVb is smaller than the voltage difference ΔVa. TheAs-doped polysilicon contact plug 120 a may reduce diffusion ofimpurities from the contact plug 120 a to the N-type impurity diffusionlayer 108. In other words, because the N-type impurity diffusion layer108 of a transistor according to embodiments of the presentinvention-has a lower doping concentration than that of the transistorhaving a phosphorus doped polysilicon contact plug, an additionaldiffusion can be reduced. As a result, although a voltage applied to thedrain may increase, a drain-induced barrier lowering (DIBL) phenomenonmay be reduced thereby improving a punchthrough characteristic betweenthe N-type impurity diffusion layers (source/drain regions) 108.

According to some embodiments, the-As-doped polysilicon layer 120 may beformed using a single wafer type deposition apparatus. Because a singlewafer type deposition apparatus may have a processing chamber receivingone wafer therein and a loadlock chamber, it may reduce an amount ofexternally provided oxygen as compared with a batch type depositionapparatus in which a plurality of wafers are processed at the same time.Accordingly, it may be possible to further suppress formation of anative oxide layer at an interface between the As-doped polysiliconlayer 120 and the N-type impurity diffusion layer 180. As a result, acontact resistance of the As-doped polysilicon layer 120 and the N-typeimpurity diffusion layer 108 may be reduced. According to additionalembodiments, the As-doped polysilicon layer 120 can be doped in theprocessing chamber using an in-situ technique.

In addition, the As-doped polysilicon layer 120 may be a dual layer inwhich a first As-doped polysilicon layer 115 and a second As-dopedpolysilicon layer 117 are sequentially stacked. By providing differentdeposition rates for the first and second As-doped polysilicon layers115 and 117, void formation in the contact hole 110 may be reduced and athroughput of the As-doped polysilicon contact plug 120 may be enhanced.Here, a first As-doped polysilicon layer 115 is formed to partially fillthe contact hole 110. A second As-doped polysilicon layer 117 is formedon the first As-doped polysilicon layer 115 to further fill the contacthole 110. In this case, the second As-doped polysilicon layer 117 has ahigh deposition rate relative to a deposition rate of the first As-dopedpolysilicon layer 115.

In other words, the first As-doped polysilicon layer 115 having arelatively low deposition rate (as compared to the relatively highdeposition rate of the second As-doped polysilicon layer 117) mayconformally fill the contact hole 110. Owing to the lower depositionrate, the first As-doped polysilicon layer 115 may provide a higherdegree of step coverage as compared to the second As-doped polysiliconlayer 117. Thus, an internal portion of the contact hole 110 may befilled without voids. As a result, an unfilled portion of the contacthole 110 may have a decreased aspect ratio when forming the secondAs-doped polysilicon layer 117. Because the second As-doped polysiliconlayer 117 has a relatively high deposition rate (compared to the lowerdeposition rate of the first As-doped polysilicon layer 115) throughputmay be increased when the second As-doped polysilicon layer 117 isformed on the first As-doped polysilicon layer 115.

According to some embodiments, the first As-doped polysilicon layer 115can be formed at a deposition rate of about 100 Å/min˜300 Å/min.According to additional embodiments, the second As-doped polysiliconlayer 117 can be formed at a deposition rate of about 800 Å/min˜1500Å/min.

According to second embodiments of the present invention, a conductivelayer filling a contact hole includes two layers doped with differentimpurities. FIG. 7 and FIG. 8 are cross-sectional views illustratingsteps of forming a semiconductor device according to the secondembodiments of the present invention. Steps of forming a gate patternand an interlayer insulating film are the same as discussed in FIG. 2and FIG. 3 and will not be discussed in further detail.

Referring to FIG. 7 and FIG. 8, an interlayer insulating film 109 ispatterned to form contact holes 110 exposing predetermined areas ofN-type impurity diffusion layers 108. An As-doped polysilicon layer 200is formed on an entire surface of a semiconductor substrate 101 toprovide conformal deposition in the contact hole 110. A phosphorus (P)doped polysilicon layer 210 is formed on the As-doped polysilicon layer200 to fill the contact hole 110. Because polysilicon layer 200 is dopedwith arsenic (As) and arsenic has a diffusion coefficient less than thatof phosphorus (P), diffusion of phosphorus (P) ions from the phosphorus(P) doped polysilicon layer 210 into the N-type impurity diffusion layer108 may be reduced to enhance punchthrough characteristics of atransistor.

The phosphorus (P) doped polysilicon layer 210 and the As-dopedpolysilicon layer 200 can be planarized down to a top surface of theinterlayer insulating film 109, forming an As-doped polysilicon layerpattern 200 a and a phosphorus (P) doped polysilicon layer pattern 210 athat are sequentially stacked. The patterns 200 a and 210 a provide acontact plug 220. Because the contact plug 220 includes the polysiliconlayer pattern 210 a doped with phosphorus (P) whose resistivity may beless than that of arsenic (As) doped polysilicon, a resistance of thecontact plug 220 can be reduced.

According to some embodiments, the As-doped polysilicon layer 200 can beformed using a single wafer type deposition apparatus where a materiallayer is formed by inserting wafers into a processing chamber one byone. According to additional embodiments, the As-doped polysilicon layer220 is doped using an in-situ technique so that formation and doping ofthe polysilicon layer are done concurrently.

The phosphorus (P) doped polysilicon layer 210 may also be formed usingthe same single wafer type deposition apparatus used to form theAs-doped polysilicon layer. In the alternative, the phosphorus (P) dopedpolysilicon layer 210 may be formed using a batch type depositionapparatus. The phosphorus (P) doped polysilicon layer 210 may be dopedusing an in-situ technique, or the phosphorus (P) doped polysiliconlayer 210 may be doped using POCl₃ following formation of an undopedpolysilicon layer.

Methods according to embodiments of the present invention can reducediffusion of impurities from a doped polysilicon layer filling a contacthole to impurity diffusion layers (such as source/drain regions) exposedby the contact hole.

According to embodiments of the present invention, a method of forming asemiconductor device can be provided. An interlayer insulating film isformed on an entire surface of a semiconductor substrate having anN-type impurity diffusion layer. The interlayer insulating film ispatterned to form a contact hole exposing a predetermined area of theN-type impurity diffusion layer. A doped polysilicon layer is formed onan entire surface of a semiconductor substrate to fill the contact hole.The doped polysilicon layer includes at least a portion thereof dopedwith an element whose diffusion coefficient is less than that ofphosphorus among elements selected from Group V of the periodic table byMendeleef.

According to additional embodiments of the present invention, an N-typeimpurity diffusion layer is formed on a P-type semiconductor substrate.An interlayer insulating film is formed on an entire surface of thesemiconductor substrate having the N-type impurity diffusion layer. Theinterlayer insulating film is patterned to form a contact hole exposinga predetermined area of the N-type impurity diffusion layer. An arsenic(As) doped polysilicon layer is formed to fill the contact hole.

To form the As doped polysilicon layer, a first As doped polysiliconlayer is formed to partially fill the contact hole and a second As dopedpolysilicon layer is formed on the first As doped polysilicon layer tofill the contact hole. A deposition rate of the second As dopedpolysilicon layer is higher than that of the first As doped polysiliconlayer.

According to yet additional embodiments of the present invention, amethod of forming a semiconductor device includes forming an N-typeactive region on a P-type semiconductor substrate. An interlayerinsulating film is formed on an entire surface of the semiconductorsubstrate having the N-type active region. The interlayer insulatingfilm is patterned to form a contact hole exposing a predetermined areaof the N-type active region. An arsenic (As) doped polysilicon layer isformed on an entire surface of a semiconductor substrate to conformallyfill the contact hole. A phosphorus (P) doped polysilicon layer isformed on the As doped polysilicon layer to fill the contact hole.

It should be noted that many variations and modifications might be madeto the embodiments described above without substantially departing fromthe principles of the present invention. All such variations andmodifications are intended to be included herein within the scope of thepresent invention, as set forth in the following claims.

1. A semiconductor device comprising: a semiconductor substrateincluding a conductive region on a surface thereof; an insulating layeron the semiconductor substrate, wherein the insulating layer has acontact hole therein exposing a portion of the conductive region whereinthe insulating layer has first and second opposing surfaces such thatthe first surface of the insulating layer is adjacent the semiconductorsubstrate and the second surface of the insulating layer is spaced apartfrom the semiconductor substrate so that the first surface of theinsulating layer is between the semiconductor substrate and the secondsurface of the insulating layer; and a polysilicon contact plug in thecontact hole wherein at least a portion of the polysilicon contact plugis doped with an element having a diffusion coefficient that is lessthan a diffusion coefficient of phosphorus (P) wherein the polysiliconcontact plug comprises, a first portion of the polysilicon contact plugin the contact hole, wherein the first portion of the polysiliconcontact plug is doped with the element having the diffusion coefficientthat is less than the diffusion coefficient of phosphorus (P), and asecond portion of the polysilicon contact plug in the contact holewherein the second portion of the polysilicon contact plug is doped withan element different than the element used to dope the first portion ofthe polysilicon contact plug, wherein the first portion of thepolysilicon contact plug is between the second portion of thepolysilicon contact plug and the substrate, wherein the second surfaceof the insulating layer spaced apart from the semiconductor substrateand outside the contact hole is free of the first portion of thepolysilicon contact plug; wherein the second surface of the insulatinglayer spaced apart from the semiconductor substrate and outside thecontact hole is free of the polysilicon contact plug, and wherein thepolysilicon contact plug and the second surface of the insulating layertogether define a substantially planer surface spaced apart from thesubstrate.
 2. A semiconductor device according to claim 1 wherein theelement having the diffusion coefficient that is less than a diffusioncoefficient of phosphorus (P) is selected from at least one element fromGroup V of the periodic table.
 3. A semiconductor device according toclaim 1 wherein the element having the diffusion coefficient that isless than a diffusion coefficient of phosphorus (P) comprises at leastone of arsenic and/or antimony.
 4. A semiconductor device according toclaim 1 wherein the element having the diffusion coefficient that isless than a diffusion coefficient of phosphorus (P) comprises arsenic.5. A semiconductor device according to claim 1 wherein the conductiveregion of the semiconductor substrate comprises a region of thesubstrate doped with an N-type dopant.
 6. A semiconductor deviceaccording to claim 5 wherein the substrate comprises a P-type substrate.7. A semiconductor device according to claim 1 wherein the secondportion of the polysilicon contact plug is doped with phosphorus.
 8. Asemiconductor device according to claim 7 wherein the first portion ofthe polysilicon contact plug is doped with arsenic.
 9. A semiconductordevice according to claim 1 further comprising: an isolation layerbetween the semiconductor substrate and the insulating layer wherein theisolation layer defines an active region of the substrate not covered bythe isolation layer; a gate extending across the active region of thesubstrate between the semiconductor substrate and the insulating layer;and a doped portion of the active region adjacent to the gate definingthe conductive region of the substrate.
 10. A semiconductor deviceaccording to claim 1 wherein the insulating layer comprises a siliconoxide layer.
 11. A semiconductor device according to claim 1 wherein thefirst and second portions of the polysilicon contact plug are confinedwithin the contact hole.
 12. A semiconductor device according to claim 1wherein the first portion of the polysilicon contact plug is confinedwithin the contact hole.
 13. A semiconductor device according to claim 1wherein the first portion of the polysilicon contact plug extends alongsidewalls of the contact hole between the second portion of thepolysilicon contact plug and the sidewalls of the contact hole.
 14. Asemiconductor device according to claim 1 wherein the second portion ofthe polysilicon contact plug is directly on the first portion of thepolysilicon contact plug with no intervening layers therebetween.